au.\*:("KAMOHARA, Shiro")
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Pre-silicon parameter generation methodology using BSIM3 for circuit performance-oriented device optimizationMIYAMA, Mikako; KAMOHARA, Shiro; HIRAKI, Mitsuru et al.IEEE transactions on semiconductor manufacturing. 2001, Vol 14, Num 2, pp 134-142, issn 0894-6507Article
Direct observation of worst-bit leakage currents of DRAMMORI, Yuki; KAMOHARA, Shiro; MONIWA, Masahiro et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 2, pp 398-400, issn 0018-9383, 3 p.Article
Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injectionBHARATH KUMAR, P; NAIR, Pradeep R; SHARMA, Ravinder et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 698-705, issn 0018-9383, 8 p.Article
Analysis of SRAM neutron-induced errors based on the consideration of both charge-collection and parasitic-bipolar failure modesOSADA, Kenichi; KITAI, Naoki; KAMOHARA, Shiro et al.Custom integrated circuits conference. 2004, pp 357-360, isbn 0-7803-8495-4, 1Vol, 4 p.Conference Paper
Advanced Method for Defect Characterization Using Fail Bit Analysis and Critical Area SimulationMATSUMOTO, Chizu; HAMAMURA, Yuichi; CHIDA, Takafumi et al.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 2, pp 151-157, issn 0894-6507, 7 p.Conference Paper
A New Critical Area Simulation Algorithm and Its Application for Failing Bit AnalysisMATSUMOTO, Chizu; HAMAMURA, Yuichi; TSUNODA, Yoshiyuki et al.IEICE transactions on electronics. 2011, Vol 94, Num 3, pp 353-360, issn 0916-8524, 8 p.Article
New physical model to explain logarithmic time dependence of data retention in flash EEPROMKAMOHARA, Shiro; OKUMURA, Tsugunori.Applied surface science. 2008, Vol 254, Num 19, pp 6174-6176, issn 0169-4332, 3 p.Conference Paper
Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTSHIRAMOTO, Toshiro; SUZUKI, Makoto; XIAOWEI SONG et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2249-2256, issn 0018-9383, 8 p.Article
Thick-strained-Si/relaxed-sige structure of high-performance RF power LDMOSFETs for cellular handsetsKONDO, Masao; SUGII, Nobuyuki; YOSHIDA, Isao et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 12, pp 3136-3145, issn 0018-9383, 10 p.Article
Random telegraph signal in flash memory: Its impact on scaling of multilevel flash memory beyond the 90-nm nodeKURATA, Hideaki; OTSUGA, Kazuo; KOTABE, Akira et al.IEEE journal of solid-state circuits. 2007, Vol 42, Num 6, pp 1362-1369, issn 0018-9200, 8 p.Article
A low-power four-transistor SRAM cell with a stacked vertical poly-silicon PMOS and a dual-word-voltage schemeKOTABE, Akira; OSADA, Kenichi; KITAI, Naoki et al.IEEE journal of solid-state circuits. 2005, Vol 40, Num 4, pp 870-876, issn 0018-9200, 7 p.Conference Paper
A 0.13-μm, 0.78-μm2 low-power four-transistor SRAM cell with a vertically stacked poly-silicon MOS and a dual-word-voltage schemeKOTABE, Akira; OSADA, Kenichi; KITAI, Naoki et al.Symposium on VLSI Circuits. 2003, pp 60-63, isbn 0-7803-8287-0, 1Vol, 4 p.Conference Paper